Tip Avalanche Photodiode—A New Generation Silicon Photomultiplier Based on Non-Planar Technology
نویسندگان
چکیده
The Silicon Photomultiplier (SiPM) is a mature photodetector concept that applied in variety of applications ranging from medical imaging to automotive LiDAR systems. Over the last few years, improvements sensor performance are gradually approaching saturation. In this work we present our new overcome intrinsic limitations planar configurations electrodes. Our non-planar technology based on focusing and enhancing electric fields by tip-like shape field lack typical micro-cell edges, allows us exclude cell separation boundaries eliminate dead space around active areas. design provides high-density layout with high geometric efficiency. It resolves well-known trade-off between detection efficiency dynamic range. first “Tip Avalanche Photodiode” (TAPD) prototypes show remarkable above 80% for pitch 15 ?m. This directly translates into photon (PDE) record peak value 73% at 600nm respect state-of-the-art SiPMs. Moreover, PDE remains 45% up wavelength 800nm another 22% 905nm. reduced capacity fast recovery time below 4ns, which improves operation rates. Overall, TAPD anticipated be very promising SiPM generation various wide-spectral high-dynamic-range health science, biophysics, particle physics LiDARs.
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ژورنال
عنوان ژورنال: IEEE Sensors Journal
سال: 2021
ISSN: ['1558-1748', '1530-437X']
DOI: https://doi.org/10.1109/jsen.2020.3041556